InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors
نویسندگان
چکیده
Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al0.7Ga0.3Sb and In0.2Al0.8Sb alloys. The distance between the gate and the channel was reduced to 7–13 nm to allow good aspect ratios for very short gate lengths. In addition, n-InAs caps were successfully deposited on the In0.2Al0.8Sb upper barrier allowing for low sheet resistance with relatively low sheet carrier density in the channel. These advances are expected to result in InAs-channel HEMTs with enhanced microwave performance and better reliability.
منابع مشابه
Fabrication and characterization of InAs / AlGaSb HEMTs with high - k gate insulators
Submitted for the MAR08 Meeting of The American Physical Society Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators TOSHIHIKO MAEMOTO, KENJI FUJIWARA, TATSUYA INOUE, NAOKI AMANO, MASATOSHI KOYAMA, SHIGEHIKO SASA, MASATAKA INOUE, OSAKA INSTITUTE OF TECHNOLOGY TEAM — We report on the fabrication and characterization of InAs/AlGaSb high electron mobility transistors ...
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